AOK015V65X2 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 67A
Pulsed drain current: 200A
Power dissipation: 312W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 152nC
Kind of channel: enhancement
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 67A
Pulsed drain current: 200A
Power dissipation: 312W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 152nC
Kind of channel: enhancement
Kind of package: tube
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис AOK015V65X2 ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 67A, Pulsed drain current: 200A, Power dissipation: 312W, Case: TO247-3, Gate-source voltage: -5...15V, On-state resistance: 23mΩ, Mounting: THT, Gate charge: 152nC, Kind of channel: enhancement, Kind of package: tube, кількість в упаковці: 1 шт.
Інші пропозиції AOK015V65X2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOK015V65X2 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 67A Pulsed drain current: 200A Power dissipation: 312W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 23mΩ Mounting: THT Gate charge: 152nC Kind of channel: enhancement Kind of package: tube |
товару немає в наявності |