AOK033V120X2Q Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 1+ | 1548.24 грн |
| 10+ | 1090.18 грн |
| 25+ | 987.26 грн |
Відгуки про товар
Написати відгук
Технічний опис AOK033V120X2Q Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +15V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, Grade: Automotive, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 2.8V @ 17.5mA, Power Dissipation (Max): 300W (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.