
AOK10B60D Alpha & Omega Semiconductor

Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис AOK10B60D Alpha & Omega Semiconductor
Description: IGBT 600V 20A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 10ns/72ns, Switching Energy: 260µJ (on), 70µJ (off), Test Condition: 400V, 10A, 30Ohm, 15V, Gate Charge: 17.4 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 163 W.
Інші пропозиції AOK10B60D
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
AOK10B60D | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 600V; 10A; 82W; TO247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 82W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 17.4nC Kind of package: tube кількість в упаковці: 1 шт |
товару немає в наявності |
||
![]() |
AOK10B60D | Виробник : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 10ns/72ns Switching Energy: 260µJ (on), 70µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 17.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 163 W |
товару немає в наявності |
|
AOK10B60D | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 600V; 10A; 82W; TO247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 82W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 17.4nC Kind of package: tube |
товару немає в наявності |