Технічний опис AOKS40B65H2AL Alpha & Omega Semiconductor
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ, Turn-off time: 151ns, Gate-emitter voltage: ±30V, Collector-emitter saturation voltage: 2.05V, Collector current: 40A, Turn-off switching energy: 0.54mJ, Mounting: THT, Turn-on switching energy: 1.17mJ, Collector-emitter voltage: 650V, Power dissipation: 105W, Gate charge: 61nC, Pulsed collector current: 120A, Type of transistor: IGBT, Turn-on time: 64ns, Kind of package: tube, Case: TO247, кількість в упаковці: 1 шт.
Інші пропозиції AOKS40B65H2AL
| Фото | Назва | Виробник | Інформація |
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AOKS40B65H2AL | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Turn-off time: 151ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 2.05V Collector current: 40A Turn-off switching energy: 0.54mJ Mounting: THT Turn-on switching energy: 1.17mJ Collector-emitter voltage: 650V Power dissipation: 105W Gate charge: 61nC Pulsed collector current: 120A Type of transistor: IGBT Turn-on time: 64ns Kind of package: tube Case: TO247 кількість в упаковці: 1 шт |
товар відсутній |
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| AOKS40B65H2AL | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 30ns/117ns Switching Energy: 1.17mJ (on), 540µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
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AOKS40B65H2AL | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Turn-off time: 151ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 2.05V Collector current: 40A Turn-off switching energy: 0.54mJ Mounting: THT Turn-on switching energy: 1.17mJ Collector-emitter voltage: 650V Power dissipation: 105W Gate charge: 61nC Pulsed collector current: 120A Type of transistor: IGBT Turn-on time: 64ns Kind of package: tube Case: TO247 |
товар відсутній |