AOM060V75X2Q Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: 750V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 1+ | 845.70 грн |
| 10+ | 565.39 грн |
| 240+ | 393.48 грн |
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Технічний опис AOM060V75X2Q Alpha & Omega Semiconductor Inc.
Description: 750V SILICON CARBIDE MOSFET, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +15V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, Grade: Automotive, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 3.5V @ 6mA, Power Dissipation (Max): 103W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.