AOMU66414Q Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: DUAL N
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (8x5)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 6.2W (Ta), 68W (Tc), 6.2W (Ta), 65W (Tc)
Technology: MOSFET (Metal Oxide)
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Технічний опис AOMU66414Q Alpha & Omega Semiconductor Inc.
Description: DUAL N, Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 8-DFN (8x5), Vgs(th) (Max) @ Id: 2.4V @ 250µA, FET Feature: Standard, Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V, Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 85A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 6.2W (Ta), 68W (Tc), 6.2W (Ta), 65W (Tc), Technology: MOSFET (Metal Oxide).