AON2707 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 4A 6DFN
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.8W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 117mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Технічний опис AON2707 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 4A 6DFN, Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: 6-DFN (2x2), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 2.8W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 117mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).