AON3810 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8DFN
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Технічний опис AON3810 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8DFN, Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR), Supplier Device Package: 8-DFN (3x3), Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V, Drain to Source Voltage (Vdss): 20V, Power - Max: 2.5W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).