Технічний опис AON3816 Alpha & Omega Semiconductor
Description: MOSFET 2N-CH 20V 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 20V, Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V, Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 8-DFN (3x3).
Інші пропозиції AON3816
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AON3816 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 3.1A; 1.6W; DFN8 Mounting: SMD Case: DFN8 Power dissipation: 1.6W Gate-source voltage: ±12V Type of transistor: N-MOSFET x2 Drain-source voltage: 20V Drain current: 3.1A Gate charge: 11nC Semiconductor structure: common drain Polarisation: unipolar Kind of channel: enhanced |
товар відсутній |
|
 |
AON3816 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-DFN (3x3) |
товар відсутній |
|
|
|
AON3816 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.1A; 1.6W; DFN8 Mounting: SMD Case: DFN8 Power dissipation: 1.6W Gate-source voltage: ±12V Type of transistor: N-MOSFET x2 Drain-source voltage: 20V Drain current: 3.1A Gate charge: 11nC Semiconductor structure: common drain Polarisation: unipolar Kind of channel: enhanced |
товар відсутній |