AON3820 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3
Power dissipation: 1.3W
Case: DFN3x3
Mounting: SMD
Semiconductor structure: common drain
Drain-source voltage: 24V
Drain current: 6.2A
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
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Технічний опис AON3820 ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3, Power dissipation: 1.3W, Case: DFN3x3, Mounting: SMD, Semiconductor structure: common drain, Drain-source voltage: 24V, Drain current: 6.2A, On-state resistance: 8.9mΩ, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Gate charge: 12.5nC, Kind of channel: enhanced, Gate-source voltage: ±12V, кількість в упаковці: 1 шт.
Інші пропозиції AON3820
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| AON3820 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3 Power dissipation: 1.3W Case: DFN3x3 Mounting: SMD Semiconductor structure: common drain Drain-source voltage: 24V Drain current: 6.2A On-state resistance: 8.9mΩ Type of transistor: N-MOSFET x2 Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±12V |
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