AON3820 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3; ESD
Mounting: SMD
Case: DFN3x3
Semiconductor structure: common drain
Power dissipation: 1.3W
Polarisation: unipolar
Type of transistor: N-MOSFET x2
Gate charge: 12.5nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Version: ESD
On-state resistance: 8.9mΩ
Drain current: 6.2A
Drain-source voltage: 24V
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис AON3820 ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3; ESD, Mounting: SMD, Case: DFN3x3, Semiconductor structure: common drain, Power dissipation: 1.3W, Polarisation: unipolar, Type of transistor: N-MOSFET x2, Gate charge: 12.5nC, Kind of channel: enhancement, Gate-source voltage: ±12V, Version: ESD, On-state resistance: 8.9mΩ, Drain current: 6.2A, Drain-source voltage: 24V, кількість в упаковці: 1 шт.
Інші пропозиції AON3820
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AON3820 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3; ESD Mounting: SMD Case: DFN3x3 Semiconductor structure: common drain Power dissipation: 1.3W Polarisation: unipolar Type of transistor: N-MOSFET x2 Gate charge: 12.5nC Kind of channel: enhancement Gate-source voltage: ±12V Version: ESD On-state resistance: 8.9mΩ Drain current: 6.2A Drain-source voltage: 24V |
товару немає в наявності |