AON4703 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.1W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.1W
Case: DFN8
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.1W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.1W
Case: DFN8
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис AON4703 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET P-CH 20V 3.4A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-DFN (3x2), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V.
Інші пропозиції AON4703
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AON4703 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 3.4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V |
товар відсутній |
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AON4703 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.1W; DFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.7A Power dissipation: 1.1W Case: DFN8 Gate-source voltage: ±8V Mounting: SMD Gate charge: 6.1nC Kind of channel: enhanced |
товар відсутній |