Технічний опис AON5816 Alpha & Omega Semiconductor
Description: MOSFET 2N-CH 20V 12A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-WFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 10V, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 6-DFN-EP (2x5), Part Status: Active.
Інші пропозиції AON5816
| Фото | Назва | Виробник | Інформація |
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AON5816 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 1W; DFN2x5 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Power dissipation: 1W Case: DFN2x5 Gate-source voltage: ±12V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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AON5816 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 12A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-WFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 10V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-DFN-EP (2x5) Part Status: Active |
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AON5816 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 1W; DFN2x5 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Power dissipation: 1W Case: DFN2x5 Gate-source voltage: ±12V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
товар відсутній |