AON5820 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1W
Case: DFN6
Mounting: SMD
Drain current: 8A
Gate charge: 12.5nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.01 грн |
| 20+ | 21.02 грн |
| 100+ | 19.44 грн |
| 250+ | 18.61 грн |
| 500+ | 16.70 грн |
| 1000+ | 15.79 грн |
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Технічний опис AON5820 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 20V 10A 6DFN, Supplier Device Package: 6-DFN-EP (2x5), Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 10A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.7W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 6-WFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції AON5820
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AON5820 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 10A 6DFN Supplier Device Package: 6-DFN-EP (2x5) Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V Current - Continuous Drain (Id) @ 25°C: 10A Drain to Source Voltage (Vdss): 20V Power - Max: 1.7W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| AON5820 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 10A 6DFN
Supplier Device Package: 6-DFN-EP (2x5)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 10A 6DFN
Supplier Device Package: 6-DFN-EP (2x5)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.