AON6405_102 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 28A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 15 V
Description: MOSFET P-CH 30V 28A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 15 V
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Технічний опис AON6405_102 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 28A/30A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 15 V.