AON6452L Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 6.5A/26A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
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Технічний опис AON6452L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 6.5A/26A 8DFN, Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Flat Leads, Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Part Status: Obsolete, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2W (Ta), 35W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V.