AON6484 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 3.3A/12A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
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Технічний опис AON6484 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 3.3A/12A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Power Dissipation (Max): 2W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 79mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Flat Leads, Packaging: Tape & Reel (TR).