AON6812 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 22A; 12.5W; DFN5x6
Mounting: SMD
Case: DFN5x6
Power dissipation: 12.5W
Polarisation: unipolar
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Semiconductor structure: common drain
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 22A; 12.5W; DFN5x6
Mounting: SMD
Case: DFN5x6
Power dissipation: 12.5W
Polarisation: unipolar
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Semiconductor structure: common drain
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
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Технічний опис AON6812 ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 22A; 12.5W; DFN5x6, Mounting: SMD, Case: DFN5x6, Power dissipation: 12.5W, Polarisation: unipolar, Gate charge: 11nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Semiconductor structure: common drain, Drain-source voltage: 30V, Drain current: 22A, On-state resistance: 4mΩ, Type of transistor: N-MOSFET x2, кількість в упаковці: 1 шт.
Інші пропозиції AON6812
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AON6812 | Виробник : Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 27A 8-DFN |
товар відсутній |
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AON6812 | Виробник : Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 27A 8-DFN |
товар відсутній |
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AON6812 | Виробник : Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 27A 8-DFN |
товар відсутній |
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AON6812 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 22A; 12.5W; DFN5x6 Mounting: SMD Case: DFN5x6 Power dissipation: 12.5W Polarisation: unipolar Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Semiconductor structure: common drain Drain-source voltage: 30V Drain current: 22A On-state resistance: 4mΩ Type of transistor: N-MOSFET x2 |
товар відсутній |