AON6918 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 15A/26.5A 8DFN
Supplier Device Package: 8-DFN-EP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15A, 26.5A
Drain to Source Voltage (Vdss): 25V
Power - Max: 2W, 2.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Технічний опис AON6918 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 15A/26.5A 8DFN, Supplier Device Package: 8-DFN-EP (5x6), Vgs(th) (Max) @ Id: 2.3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 15A, 26.5A, Drain to Source Voltage (Vdss): 25V, Power - Max: 2W, 2.2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-WDFN Exposed Pad, Packaging: Tape & Reel (TR).