Технічний опис AON6926 Alpha & Omega Semiconductor
Description: MOSFET 2N-CH 30V 11A/12A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, 2.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A, 12A, Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V, Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (5x6).
Інші пропозиції AON6926
| Фото | Назва | Виробник | Інформація |
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AON6926 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 28/32A; 12.5/14W; DFN5x6 Case: DFN5x6 Semiconductor structure: asymmetric Drain-source voltage: 30V Drain current: 28/32A On-state resistance: 11/8.5mΩ Type of transistor: N-MOSFET x2 Power dissipation: 12.5/14W Polarisation: unipolar Gate charge: 9.5/8nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD кількість в упаковці: 1 шт |
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AON6926 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 11A/12A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W, 2.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A, 12A Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) |
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AON6926 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 28/32A; 12.5/14W; DFN5x6 Case: DFN5x6 Semiconductor structure: asymmetric Drain-source voltage: 30V Drain current: 28/32A On-state resistance: 11/8.5mΩ Type of transistor: N-MOSFET x2 Power dissipation: 12.5/14W Polarisation: unipolar Gate charge: 9.5/8nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD |
товар відсутній |