AON6946 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 12/14A; 2.9/5.2W; DFN5x6B
Mounting: SMD
Polarisation: unipolar
Power dissipation: 2.9/5.2W
Gate charge: 3.9/6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6B
Semiconductor structure: asymmetric
Drain-source voltage: 30V
Drain current: 12/14A
On-state resistance: 11.6/7.8mΩ
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
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Технічний опис AON6946 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 30V 14A/18A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.5W, 3.9W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 14A, 18A, Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, Rds On (Max) @ Id, Vgs: 11.6mOhm @ 13A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6).
Інші пропозиції AON6946
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AON6946 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 16A/18A 8-Pin DFN-B EP T/R |
товар відсутній |
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AON6946 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 14A/18A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W, 3.9W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A, 18A Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) |
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AON6946 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 12/14A; 2.9/5.2W; DFN5x6B Mounting: SMD Polarisation: unipolar Power dissipation: 2.9/5.2W Gate charge: 3.9/6nC Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN5x6B Semiconductor structure: asymmetric Drain-source voltage: 30V Drain current: 12/14A On-state resistance: 11.6/7.8mΩ Type of transistor: N-MOSFET x2 |
товар відсутній |