Технічний опис AON7568 Alpha & Omega Semiconductor
Description: MOSFET N-CH 30V 25A/32A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V.
Інші пропозиції AON7568
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AON7568 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 32A; 11W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Power dissipation: 11W Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 18nC Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 4.6mΩ Drain current: 32A Drain-source voltage: 30V кількість в упаковці: 5000 шт |
товару немає в наявності |
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AON7568 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 25A/32A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V |
товару немає в наявності |
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AON7568 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 11W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Power dissipation: 11W Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 18nC Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 4.6mΩ Drain current: 32A Drain-source voltage: 30V |
товару немає в наявності |