AON7700 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 16A/40A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 26W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Технічний опис AON7700 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 16A/40A 8DFN, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN-EP (3x3), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 26W (Tc), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).