Технічний опис AONR21311C Alpha & Omega Semiconductor
Description: LINEAR IC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 12A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 7A, 10V, Power Dissipation (Max): 3.1W (Ta), 11W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V.
Інші пропозиції AONR21311C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AONR21311C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -48A; 4.5W Mounting: SMD Case: DFN3x3 EP Kind of package: reel; tape Power dissipation: 4.5W Polarisation: unipolar Type of transistor: P-MOSFET Gate charge: 12.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -48A On-state resistance: 40mΩ Drain current: -12A Drain-source voltage: -30V кількість в упаковці: 1 шт |
товару немає в наявності |
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| AONR21311C | Виробник : Alpha & Omega Semiconductor Inc. |
Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 7A, 10V Power Dissipation (Max): 3.1W (Ta), 11W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V |
товару немає в наявності |
||
| AONR21311C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -48A; 4.5W Mounting: SMD Case: DFN3x3 EP Kind of package: reel; tape Power dissipation: 4.5W Polarisation: unipolar Type of transistor: P-MOSFET Gate charge: 12.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -48A On-state resistance: 40mΩ Drain current: -12A Drain-source voltage: -30V |
товару немає в наявності |