Технічний опис AONR34332C Alpha & Omega Semiconductor
Description: MOSFET N-CH 30V 48A/50A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 83.3W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-DFN-EP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 15 V.
Інші пропозиції AONR34332C
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AONR34332C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 22W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Power dissipation: 22W Case: DFN3.3x3.3 EP Gate-source voltage: ±12V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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AONR34332C | Виробник : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 83.3W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 15 V |
товару немає в наявності |
|
AONR34332C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 22W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Power dissipation: 22W Case: DFN3.3x3.3 EP Gate-source voltage: ±12V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |