Продукція > ALPHA & OMEGA SEMICONDUCTOR INC. > AONR36328

AONR36328 Alpha & Omega Semiconductor Inc.

Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V

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Технічний опис AONR36328 Alpha & Omega Semiconductor Inc.

Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V.

Інші пропозиції AONR36328

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	AONR36328	Виробник : ALPHA & OMEGA SEMICONDUCTOR	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 70A; 9.6W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Kind of package: reel; tape Drain current: 20A Drain-source voltage: 30V Gate charge: 11nC Pulsed drain current: 70A On-state resistance: 8.4mΩ Kind of channel: enhancement Power dissipation: 9.6W Polarisation: unipolar Gate-source voltage: ±16V Type of transistor: N-MOSFET	товару немає в наявності	В кошику од. на суму грн.