AONR36328 ALPHA & OMEGA SEMICONDUCTOR


AONR36328.pdf Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 70A; 9.6W; DFN3x3 EP
Mounting: SMD
Case: DFN3x3 EP
Kind of package: reel; tape
Power dissipation: 9.6W
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 70A
On-state resistance: 8.4mΩ
Drain current: 20A
Drain-source voltage: 30V
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Технічний опис AONR36328 ALPHA & OMEGA SEMICONDUCTOR

Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V.

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AONR36328 Виробник : Alpha & Omega Semiconductor Inc. AONR36328.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
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AONR36328 Виробник : ALPHA & OMEGA SEMICONDUCTOR AONR36328.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 70A; 9.6W; DFN3x3 EP
Mounting: SMD
Case: DFN3x3 EP
Kind of package: reel; tape
Power dissipation: 9.6W
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 70A
On-state resistance: 8.4mΩ
Drain current: 20A
Drain-source voltage: 30V
товару немає в наявності
В кошику  од. на суму  грн.