AONR36328 ALPHA & OMEGA SEMICONDUCTOR

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 70A; 9.6W; DFN3x3 EP
Mounting: SMD
Case: DFN3x3 EP
Kind of package: reel; tape
Power dissipation: 9.6W
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 70A
On-state resistance: 8.4mΩ
Drain current: 20A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
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Технічний опис AONR36328 ALPHA & OMEGA SEMICONDUCTOR
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V.
Інші пропозиції AONR36328
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AONR36328 | Виробник : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V |
товару немає в наявності |
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AONR36328 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 70A; 9.6W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Kind of package: reel; tape Power dissipation: 9.6W Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 70A On-state resistance: 8.4mΩ Drain current: 20A Drain-source voltage: 30V |
товару немає в наявності |