Технічний опис AONS1R1A70 Alpha & Omega Semiconductor
Description: LINEAR IC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 6.6A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 1A, 10V, Power Dissipation (Max): 4.2W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Supplier Device Package: 8-DFN-EP (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 461 pF @ 100 V.
Інші пропозиції AONS1R1A70
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AONS1R1A70 | Виробник : ALPHA & OMEGA SEMICONDUCTOR | AONS1R1A70 SMD N channel transistors |
товару немає в наявності |
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AONS1R1A70 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 6.6A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 1A, 10V Power Dissipation (Max): 4.2W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: 8-DFN-EP (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 461 pF @ 100 V |
товару немає в наявності |