Технічний опис AONY36302 Alpha & Omega Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 32/71A; 8.5/18W; DFN5x6D, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 32/71A, Power dissipation: 8.5/18W, Case: DFN5x6D, Gate-source voltage: ±20/±12V, On-state resistance: 8.6/2.6mΩ, Mounting: SMD, Kind of channel: enhancement, Semiconductor structure: asymmetric, кількість в упаковці: 1 шт.
Інші пропозиції AONY36302
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AONY36302 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 32/71A; 8.5/18W; DFN5x6D Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 32/71A Power dissipation: 8.5/18W Case: DFN5x6D Gate-source voltage: ±20/±12V On-state resistance: 8.6/2.6mΩ Mounting: SMD Kind of channel: enhancement Semiconductor structure: asymmetric кількість в упаковці: 1 шт |
товару немає в наявності |
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| AONY36302 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 32/71A; 8.5/18W; DFN5x6D Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 32/71A Power dissipation: 8.5/18W Case: DFN5x6D Gate-source voltage: ±20/±12V On-state resistance: 8.6/2.6mΩ Mounting: SMD Kind of channel: enhancement Semiconductor structure: asymmetric |
товару немає в наявності |