AONY36306 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17.5A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис AONY36306 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17.5A 8DFN, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V, Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).