AOP609 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 60V 8DIP
Supplier Device Package: 8-PDIP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 30V
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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Технічний опис AOP609 Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 60V 8DIP, Supplier Device Package: 8-PDIP, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 30V, Drain to Source Voltage (Vdss): 60V, Power - Max: 2.5W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Through Hole, Package / Case: 8-DIP (0.300", 7.62mm), Packaging: Tube.