AOT210L Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 20A/105A TO220
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 176W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
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Технічний опис AOT210L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 20A/105A TO220, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 1.9W (Ta), 176W (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V.