Технічний опис AOT2610L Alpha & Omega Semiconductor
Description: MOSFET N-CH 60V 9A/55A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 55A (Tc), Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V.
Інші пропозиції AOT2610L
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AOT2610L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 39A; 37.5W; TO220 Case: TO220 Drain-source voltage: 60V Drain current: 39A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Power dissipation: 37.5W Polarisation: unipolar Gate charge: 8.5nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT кількість в упаковці: 1000 шт |
товару немає в наявності |
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AOT2610L | Виробник : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V |
товару немає в наявності |
|
![]() |
AOT2610L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 39A; 37.5W; TO220 Case: TO220 Drain-source voltage: 60V Drain current: 39A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Power dissipation: 37.5W Polarisation: unipolar Gate charge: 8.5nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
товару немає в наявності |