Технічний опис AOT66914L Alpha & Omega Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 120A; Idm: 480A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 120A, Pulsed drain current: 480A, Power dissipation: 185W, Case: TO220, Gate-source voltage: ±20V, On-state resistance: 2.7mΩ, Mounting: THT, Gate charge: 155nC, Kind of package: tube, Kind of channel: enhancement, Technology: AlphaSGT™, кількість в упаковці: 1000 шт.
Інші пропозиції AOT66914L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOT66914L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 185W Case: TO220 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhancement Technology: AlphaSGT™ кількість в упаковці: 1000 шт |
товару немає в наявності |
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| AOT66914L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 185W Case: TO220 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhancement Technology: AlphaSGT™ |
товару немає в наявності |