AOT66916L Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 35.5/120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
на замовлення 863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 361.30 грн |
| 50+ | 179.66 грн |
| 100+ | 163.44 грн |
| 500+ | 126.69 грн |
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Технічний опис AOT66916L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 35.5/120A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 8.3W (Ta), 277W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V.
Інші пропозиції AOT66916L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AOT66916L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 35.5A; 8.3W Gate charge: 78nC Technology: AlphaSGT™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220-3 Drain-source voltage: 100V Drain current: 35.5A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar кількість в упаковці: 1 шт |
товару немає в наявності |
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| AOT66916L | Виробник : Alpha & Omega Semiconductor |
N-Channel MOSFET |
товару немає в наявності |
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AOT66916L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 35.5A; 8.3W Gate charge: 78nC Technology: AlphaSGT™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220-3 Drain-source voltage: 100V Drain current: 35.5A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar |
товару немає в наявності |