Технічний опис AOTF280A60L Alpha & Omega Semiconductor
Description: MOSFET N-CH 600V 14A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tj), Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V.
Інші пропозиції AOTF280A60L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOTF280A60L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement Mounting: THT кількість в упаковці: 1 шт |
товару немає в наявності |
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AOTF280A60L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 14A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tj) Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V |
товару немає в наявності |
|
| AOTF280A60L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement Mounting: THT |
товару немає в наявності |