AOTF286L Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 13.5A/56A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 37.5W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 40 V
на замовлення 2270 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 212.48 грн |
| 50+ | 101.00 грн |
| 100+ | 90.95 грн |
| 500+ | 68.82 грн |
| 1000+ | 63.51 грн |
| 2000+ | 59.04 грн |
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Технічний опис AOTF286L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 13.5A/56A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 56A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 2.2W (Ta), 37.5W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: TO-220F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 40 V.
Інші пропозиції AOTF286L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AOTF286L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 18.5W; TO220F Drain-source voltage: 80V Drain current: 39A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 18.5W Polarisation: unipolar Gate charge: 44.5nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220F кількість в упаковці: 1 шт |
товару немає в наявності |
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AOTF286L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 18.5W; TO220F Drain-source voltage: 80V Drain current: 39A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 18.5W Polarisation: unipolar Gate charge: 44.5nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220F |
товару немає в наявності |