AOTF66920L Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 22.5/41A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 27.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
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Технічний опис AOTF66920L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 22.5/41A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 41A (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V, Power Dissipation (Max): 8.3W (Ta), 27.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V.
Інші пропозиції AOTF66920L
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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AOTF66920L | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 22.5A; 8.3W Type of transistor: N-MOSFET Power dissipation: 8.3W Case: TO220FP Mounting: THT Gate charge: 50nC On-state resistance: 8.2mΩ Polarisation: unipolar Technology: AlphaSGT™ Drain current: 22.5A Kind of channel: enhancement Drain-source voltage: 100V Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| AOTF66920L |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 22.5A; 8.3W
Type of transistor: N-MOSFET
Power dissipation: 8.3W
Case: TO220FP
Mounting: THT
Gate charge: 50nC
On-state resistance: 8.2mΩ
Polarisation: unipolar
Technology: AlphaSGT™
Drain current: 22.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 22.5A; 8.3W
Type of transistor: N-MOSFET
Power dissipation: 8.3W
Case: TO220FP
Mounting: THT
Gate charge: 50nC
On-state resistance: 8.2mΩ
Polarisation: unipolar
Technology: AlphaSGT™
Drain current: 22.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.