Технічний опис AOTL66915 Alpha & Omega Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 339A; Idm: 832A, Drain current: 339A, On-state resistance: 1.7mΩ, Type of transistor: N-MOSFET, Power dissipation: 214W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 185nC, Technology: AlphaSGT™, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 832A, Mounting: SMD, Case: TOLLA, Drain-source voltage: 100V, кількість в упаковці: 2000 шт.
Інші пропозиції AOTL66915
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOTL66915 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 339A; Idm: 832A Drain current: 339A On-state resistance: 1.7mΩ Type of transistor: N-MOSFET Power dissipation: 214W Polarisation: unipolar Kind of package: reel; tape Gate charge: 185nC Technology: AlphaSGT™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 832A Mounting: SMD Case: TOLLA Drain-source voltage: 100V кількість в упаковці: 2000 шт |
товару немає в наявності |
||
| AOTL66915 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 339A; Idm: 832A Drain current: 339A On-state resistance: 1.7mΩ Type of transistor: N-MOSFET Power dissipation: 214W Polarisation: unipolar Kind of package: reel; tape Gate charge: 185nC Technology: AlphaSGT™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 832A Mounting: SMD Case: TOLLA Drain-source voltage: 100V |
товару немає в наявності |