Технічний опис AOTS21319C Alpha & Omega Semiconductor
Description: MOSFET P-CH 30V 2.7A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V.
Інші пропозиції AOTS21319C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| AOTS21319C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 AOTS21319C SMD P channel transistors |
товару немає в наявності |
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AOTS21319C | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 2.7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V |
товару немає в наявності |