AOU7S65

AOU7S65 Alpha & Omega Semiconductor


812aou7s65.pdf Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251 Tube
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис AOU7S65 Alpha & Omega Semiconductor

Description: MOSFET N-CH 600V 7A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V.

Інші пропозиції AOU7S65

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
AOU7S65 AOU7S65 Виробник : Alpha & Omega Semiconductor Inc. AOU7S65.pdf Description: MOSFET N-CH 600V 7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
товар відсутній