AOV11S60 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; DFN4
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DFN4
Drain-source voltage: 600V
Drain current: 7A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
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Технічний опис AOV11S60 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 650MA/8A 4DFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 8A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 3.8A, 10V, Power Dissipation (Max): 8.3W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Supplier Device Package: 4-DFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V.
Інші пропозиції AOV11S60
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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AOV11S60 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 650MA/8A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 3.8A, 10V Power Dissipation (Max): 8.3W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: 4-DFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V |
товар відсутній |
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| AOV11S60 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; DFN4 Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±30V Case: DFN4 Drain-source voltage: 600V Drain current: 7A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Polarisation: unipolar |
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