Технічний опис AOV15S60 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 520MA/12A 4DFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 520mA (Ta), 12A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V, Power Dissipation (Max): 8.3W (Ta), 208W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 4-DFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V.
Інші пропозиції AOV15S60
| Фото | Назва | Виробник | Інформація |
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AOV15S60 | Виробник : Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 600V 520MA/12A 4DFNPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 520mA (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V Power Dissipation (Max): 8.3W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 4-DFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V |
товару немає в наявності |