AOV15S60 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 520MA/12A 4DFN
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta), 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
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Технічний опис AOV15S60 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 520MA/12A 4DFN, Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-DFN (8x8), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Power Dissipation (Max): 8.3W (Ta), 208W (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 520mA (Ta), 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR).