AOW2502 ALPHA & OMEGA SEMICONDUCTOR

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 111W; TO262
Case: TO262
Drain-source voltage: 150V
Drain current: 67A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 111W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
кількість в упаковці: 1 шт
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Технічний опис AOW2502 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 150V 16A/106A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 106A (Tc), Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 277W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 75 V.
Інші пропозиції AOW2502
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AOW2502 | Виробник : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 106A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 277W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 75 V |
товару немає в наявності |
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AOW2502 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 111W; TO262 Case: TO262 Drain-source voltage: 150V Drain current: 67A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Power dissipation: 111W Polarisation: unipolar Gate charge: 43nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
товару немає в наявності |