Технічний опис AOW284 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 80V 15A/105A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 105A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, Power Dissipation (Max): 1.9W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5154 pF @ 40 V.
Інші пропозиції AOW284
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| AOW284 | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 80V 105A 3-Pin(3+Tab) TO-262 Tube |
товар відсутній |
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AOW284 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 15A/105A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5154 pF @ 40 V |
товар відсутній |