AOW296 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 100V 70A TO262
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Відгуки про товар
Написати відгук
Технічний опис AOW296 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 100V 70A TO262, Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Obsolete, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 3.4V @ 250µA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube.