Технічний опис AOW66412 Alpha & Omega Semiconductor
Description: N, Packaging: Tape & Reel (TR), Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 260W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V.
Інші пропозиції AOW66412
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOW66412 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 AOW66412 THT N channel transistors |
товару немає в наявності |
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| AOW66412 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 260W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V |
товару немає в наявності |