AOY66923 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 16.5A; 6.2W; IPAK
Drain-source voltage: 100V
Drain current: 16.5A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 6.2W
Polarisation: unipolar
Gate charge: 35nC
Technology: AlphaSGT™
Gate-source voltage: ±20V
Kind of channel: enhancement
Mounting: THT
Case: IPAK
кількість в упаковці: 1 шт
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Технічний опис AOY66923 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 100V 16.5/58A TO251B, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 73W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: TO-251B, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V.
Інші пропозиції AOY66923
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AOY66923 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 16.5/58A TO251B Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-251B Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V |
товару немає в наявності |
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AOY66923 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 16.5A; 6.2W; IPAK Drain-source voltage: 100V Drain current: 16.5A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 6.2W Polarisation: unipolar Gate charge: 35nC Technology: AlphaSGT™ Gate-source voltage: ±20V Kind of channel: enhancement Mounting: THT Case: IPAK |
товару немає в наявності |