AOZ8002DI Alpha & Omega Semiconductor


aoz8002di.pdf Виробник: Alpha & Omega Semiconductor
Ultra-Low Capacitance TVS Diode Array
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис AOZ8002DI Alpha & Omega Semiconductor

Description: TVS DIODE 5.5VWM 14VC 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN, Mounting Type: Surface Mount, Type: Steering (Rail to Rail), Operating Temperature: -40°C ~ 85°C (TJ), Applications: Ethernet, Capacitance @ Frequency: 1.85pF @ 1MHz, Current - Peak Pulse (10/1000µs): 5A (8/20µs), Voltage - Reverse Standoff (Typ): 5.5V (Max), Supplier Device Package: 6-DFN (1.6x1.6), Unidirectional Channels: 4, Voltage - Breakdown (Min): 6.6V, Voltage - Clamping (Max) @ Ipp: 14V, Power Line Protection: Yes.

Інші пропозиції AOZ8002DI

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
AOZ8002DI Виробник : ALPHA & OMEGA SEMICONDUCTOR AOZ8002DI-DTE.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6.6V; 5A; DFN6; Features: ESD protection; Ch: 4
Type of diode: TVS array
Capacitance: 1pF
Max. off-state voltage: 5.5V
Max. forward impulse current: 5A
Breakdown voltage: 6.6V
Number of channels: 4
Features of semiconductor devices: ESD protection
Mounting: SMD
Case: DFN6
кількість в упаковці: 3000 шт
товар відсутній
AOZ8002DI AOZ8002DI Виробник : Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: TVS DIODE 5.5VWM 14VC 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-DFN (1.6x1.6)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.6V
Voltage - Clamping (Max) @ Ipp: 14V
Power Line Protection: Yes
товар відсутній
AOZ8002DI Виробник : ALPHA & OMEGA SEMICONDUCTOR AOZ8002DI-DTE.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6.6V; 5A; DFN6; Features: ESD protection; Ch: 4
Type of diode: TVS array
Capacitance: 1pF
Max. off-state voltage: 5.5V
Max. forward impulse current: 5A
Breakdown voltage: 6.6V
Number of channels: 4
Features of semiconductor devices: ESD protection
Mounting: SMD
Case: DFN6
товар відсутній