APT10021JFLL Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET N-CH 1000V 37A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6714.83 грн |
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Технічний опис APT10021JFLL Microchip Technology
Description: MOSFET N-CH 1000V 37A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: ISOTOP®, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V.
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APT10021JFLL | Виробник : Microchip Technology |
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Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 148A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 37A On-state resistance: 0.21Ω Power dissipation: 694W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw |
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