Технічний опис APT10025JVFR Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W, Technology: POWER MOS 5®, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 34A, Pulsed drain current: 136A, Power dissipation: 700W, Case: ISOTOP, Gate-source voltage: ±30V, On-state resistance: 0.25Ω, Kind of package: tube, Kind of channel: enhancement, Semiconductor structure: single transistor, Mechanical mounting: screw, Electrical mounting: screw, Type of semiconductor module: MOSFET transistor, кількість в упаковці: 1 шт.
Інші пропозиції APT10025JVFR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| APT10025JVFR | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 34A Pulsed drain current: 136A Power dissipation: 700W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.25Ω Kind of package: tube Kind of channel: enhancement Semiconductor structure: single transistor Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor кількість в упаковці: 1 шт |
товару немає в наявності |
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APT10025JVFR | Виробник : Microchip Technology |
Description: MOSFET N-CH 1000V 34A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: ISOTOP® Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 990 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V |
товару немає в наявності |
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| APT10025JVFR | Виробник : Microchip Technology |
MOSFET Modules FREDFET MOS5 1000 V 25 Ohm SOT-227 |
товару немає в наявності |
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| APT10025JVFR | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 34A Pulsed drain current: 136A Power dissipation: 700W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.25Ω Kind of package: tube Kind of channel: enhancement Semiconductor structure: single transistor Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor |
товару немає в наявності |