Технічний опис APT10025JVFR Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W, Type of module: MOSFET transistor, Case: ISOTOP, Technology: POWER MOS 5®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 136A, Semiconductor structure: single transistor, Drain-source voltage: 1kV, Drain current: 34A, On-state resistance: 0.25Ω, Power dissipation: 700W, Polarisation: unipolar, Electrical mounting: screw, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції APT10025JVFR
Фото | Назва | Виробник | Інформація |
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APT10025JVFR | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 136A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 34A On-state resistance: 0.25Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT10025JVFR | Виробник : Microchip Technology | Discrete Semiconductor Modules FREDFET MOS5 1000 V 25 Ohm SOT-227 |
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APT10025JVFR | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 136A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 34A On-state resistance: 0.25Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |