APT1003RBLLG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
кількість в упаковці: 1 шт
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Технічний опис APT1003RBLLG MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 1000V 4A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V.
Інші пропозиції APT1003RBLLG
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APT1003RBLLG | Виробник : Microchip Technology |
Description: MOSFET N-CH 1000V 4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V |
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APT1003RBLLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC |
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